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GP800DDS18 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual Switch IGBT Module - Dynex Semiconductor

भाग संख्या GP800DDS18
समारोह Dual Switch IGBT Module
मैन्युफैक्चरर्स Dynex Semiconductor 
लोगो Dynex Semiconductor लोगो 
पूर्व दर्शन
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<?=GP800DDS18?> डेटा पत्रक पीडीएफ

GP800DDS18 pdf
GP800DDS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T = 25˚C unless stated otherwise
case
Symbol
Parameter
Test Conditions
Max. Units
VCES
VGES
IC
IC(PK)
Pmax
Visol
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
T = 55˚C for T = 125˚C
case
j
Peak collector current
1ms, Tcase = 100˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
1800
±20
800
1600
6000
4000
V
V
A
A
W
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
R
th(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
R
th(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Tj Junction temperature
Transistor
Diode
Tstg Storage temperature range
- Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
- 21 ˚C/kW
- 40 ˚C/kW
- 8 ˚C/kW
- 150 ˚C
- 125 ˚C
–40 125 ˚C
- 5 Nm
- 2 Nm
- 10 Nm
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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