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GP800DCM18 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Hi-Reliability Chopper Switch IGBT Module - Dynex Semiconductor

भाग संख्या GP800DCM18
समारोह Hi-Reliability Chopper Switch IGBT Module
मैन्युफैक्चरर्स Dynex Semiconductor 
लोगो Dynex Semiconductor लोगो 
पूर्व दर्शन
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<?=GP800DCM18?> डेटा पत्रक पीडीएफ

GP800DCM18 pdf
GP800DCM18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
V
CES
V
GES
IC
IC(PK)
P
max
V
isol
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
Tcase = 65˚C
Peak collector current
1ms, Tcase = 100˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1800 V
±20 V
800 A
1600 A
6940 W
4000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
R
th(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
R
th(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
R
th(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
T Junction temperature
j
Transistor
Diode
Tstg Storage temperature range
- Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
- 18 ˚C/kW
- 40 ˚C/kW
- 8 ˚C/kW
- 150 ˚C
- 125 ˚C
–40 125 ˚C
- 5 Nm
- 2 Nm
- 10 Nm
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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डाउनलोड[ GP800DCM18 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
GP800DCM18Hi-Reliability Chopper Switch IGBT ModuleDynex Semiconductor
Dynex Semiconductor


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