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STD11N65M5 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel Power MOSFET - STMicroelectronics

भाग संख्या STD11N65M5
समारोह N-channel Power MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=STD11N65M5?> डेटा पत्रक पीडीएफ

STD11N65M5 pdf
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (2)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C)
Tj Operating junction temperature range
Tstg Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 9 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
Value
D2PAK
DPAK
TO-220
TO-220FP
±25
9 9 (1)
5.6 5.6 (1)
36 36 (1)
85 25
15
2500
-55 to 150
Unit
V
A
A
A
W
V/ns
V
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient
Rthj-pcb(1) Thermal resistance junction-pcb
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Value
D2PAK DPAK TO-220FP TO-220
1.47 5.0 1.47
62.5
30 50
Unit
°C/W
°C/W
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
2
130
Unit
A
mJ
DS8920 - Rev 3
page 2/30

विन्यास 30 पेज
डाउनलोड[ STD11N65M5 Datasheet.PDF ]


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