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GT20J101 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT - Toshiba Semiconductor

भाग संख्या GT20J101
समारोह TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=GT20J101?> डेटा पत्रक पीडीएफ

GT20J101 pdf
GT20J101
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
Rth (j-c)
VGE = ±20 V, VCE = 0
VCE = 600 V, VGE = 0
IC = 2 mA, VCE = 5 V
IC = 20 A, VGE = 15 V
VCE = 20 V, VGE = 0, f = 1 MHz
Inductive Load
VCC = 300 V, IC = 20 A
VGG = ±15 V, RG = 56
(Note1)
5.0
Note1: Switching time measurement circuit and input/output waveforms
Typ. Max Unit
2.1
1450
0.12
0.40
0.15
0.50
±500
1.0
8.0
2.7
0.30
0.96
nA
mA
V
V
pF
µs
°C/W
GT20J301
VGE
IC
RG
L VCC
VCE
VGE
0
90%
IC
90%
0 VCE
10%
10%
td (off)
tf
toff
10%
90%
10%
td (on)
tr
ton
10%
Note2: Switching loss measurement waveforms
VGE
0
90%
10%
IC
0 VCE
10%
Eoff Eon
2 2002-01-18

विन्यास 6 पेज
डाउनलोड[ GT20J101 Datasheet.PDF ]


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GT20J101TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBTToshiba Semiconductor
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