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GT15Q102 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Power Switching Applications - Toshiba Semiconductor

भाग संख्या GT15Q102
समारोह High Power Switching Applications
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=GT15Q102?> डेटा पत्रक पीडीएफ

GT15Q102 pdf
GT15Q102
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
Rth (j-c)
VGE = ±20 V, VCE = 0
VCE = 1200 V, VGE = 0
IC = 1.5 mA, VCE = 5 V
IC = 15 A, VGE = 15 V
VCE = 50 V, VGE = 0, f = 1 MHz
Inductive Load
VCC = 600 V, IC = 15 A
VGG = ±15 V, RG = 56 W
(Note1)
¾
¾
¾
4.0
¾
¾
¾
¾
¾
¾
¾
Note1: Switching time measurement circuit and input/output waveforms
Typ. Max Unit
¾ ±500 nA
¾ 1.0 mA
¾ 7.0
V
2.1 2.7
V
850 ¾
pF
0.05 ¾
0.12 ¾
0.16 0.32
ms
0.56 ¾
¾ 0.74 °C/W
GT15Q301
-VGE
IC
RG
L VCC
VCE
VGE
0
90%
IC
90%
0 VCE
10%
10%
td (off)
tf
toff
Note2: Switching loss measurement waveforms
VGE
0
90%
10%
10%
90%
10%
td (on)
tr
10%
ton
IC
0 VCE
10%
Eoff Eon
2 2002-01-18

विन्यास 6 पेज
डाउनलोड[ GT15Q102 Datasheet.PDF ]


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