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GT15J331 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel IGBT - Toshiba Semiconductor

भाग संख्या GT15J331
समारोह Silicon N-Channel IGBT
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=GT15J331?> डेटा पत्रक पीडीएफ

GT15J331 pdf
GT15J331
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Peak forward voltage
Reverse recovery time
Thermal resistance (IGBT)
Thermal resistance (Diode)
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
VF
trr
Rth (j-c)
Rth (j-c)
VGE = ±20 V, VCE = 0
VCE = 600 V, VGE = 0
IC = 1.5 mA, VCE = 5 V
IC = 15 A, VGE = 15 V
VCE = 20 V, VGE = 0, f = 1 MHz
Inductive Load
VCC = 300 V, IC = 15 A
VGG = 15 V, RG = 43 W
(Note1)
IF = 15 A, VGE = 0
IF = 15 A, di/dt = -100 A/ms
¾
¾
¾
¾
4.5
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Note1: Switching time measurement circuit and input/output waveforms
Typ. Max Unit
¾
¾
¾
1.75
2400
0.04
0.22
0.10
0.37
¾
¾
¾
¾
±500
1.0
7.5
2.3
¾
¾
¾
0.23
¾
2.0
200
1.79
3.45
nA
mA
V
V
pF
ms
V
ns
°C/W
°C/W
-VGE
IC
RG
L VCC
VCE
VGE
0
90%
IC
90%
0 VCE
10%
10%
td (off)
tf
toff
10%
90%
10%
td (on)
tr
ton
10%
Note2: Switching loss measurement waveforms
VGE
0
90%
10%
IC
0 VCE
Eoff
5%
Eon
2 2002-01-18

विन्यास 7 पेज
डाउनलोड[ GT15J331 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
GT15J331Silicon N-Channel IGBTToshiba Semiconductor
Toshiba Semiconductor


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