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GT15J121 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT - Toshiba Semiconductor

भाग संख्या GT15J121
समारोह Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=GT15J121?> डेटा पत्रक पीडीएफ

GT15J121 pdf
TOSHIBA
Preliminary
GT15J121
Electrical Characteristics(Ta=25)
Characteristic
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation volatage
Input capacitance
Turn-on delay time
Rise Time
Turn-on Time
Switching time
Turn-off delay time
Fall Time
Turn-off Time
Turn-on switching loss
Switching loss
Turn-off switching loss
Thermal resistance
Symbol
IGES
ICES
VGE(OFF)
VCE(sat)
Cies
td(on)
tr
ton
td(off)
tf
toff
Eon
Eoff
Rth(j-c)
Test Condition
VGE=±20V,VCE=0
VCE=600V,VGE=0
IC=1.5mA,VCE=5V
IC=15A,VGE=15V
VCE=10V,VGE=0,f=1MHz
Inductive Load
VCC=300V,IC=15A
VGG=+15V,RG=27Ω
(Note 1)
(Note 2)
Min Typ. Max Unit
- - ±500 nA
- - 1.0 mA
3.0 - 6.0 V
- 2.7 3.5 V
- 1300 - pF
- 0.04 -
- 0.03 -
- 0.12 - μs
- 0.10 -
- 0.08 0.15
- 0.20 -
- 0.23 - mJ
- 0.18 -
- - 3.57 /W
GT15J321
2001-7- 2/2

विन्यास 2 पेज
डाउनलोड[ GT15J121 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
GT15J121Insulated Gate Bipolar Transistor Silicon N Chanenel IGBTToshiba Semiconductor
Toshiba Semiconductor


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