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GT10J321 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT - Toshiba Semiconductor

भाग संख्या GT10J321
समारोह TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=GT10J321?> डेटा पत्रक पीडीएफ

GT10J321 pdf
TOSHIBA
Preliminary
GT10J321
Electrical Characteristics(Ta=25)
Characteristic
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation volatage
Input capacitance
Turn-on delay time
Rise Time
Turn-on Time
Switching time
Turn-off delay time
Fall Time
Turn-off Time
Turn-on switching loss
Switching loss
Turn-off switching loss
Peak forward voltage
Reverse recovery time
Thermal resistance(IGBT)
Thermal resistance(Diode)
Symbol
IGES
ICES
VGE(OFF)
VCE(sat)
Cies
td(on)
tr
ton
td(off)
tf
toff
Eon
Eoff
VF
trr
Rth(j-c)
Rth(j-c)
Test Condition
VGE=±20V,VCE=0
VCE=600V,VGE=0
IC=1mA,VCE=5V
IC=10A,VGE=15V
VCE=10V,VGE=0,f=1MHz
Inductive Load
VCC=300V,IC=10A
VGG=+15V,RG=68Ω
(Note 1)
(Note 2)
IF=10A,VGE=0
IF=10A,di/dt=-100A/μs
Min Typ. Max Unit
- - ±500 nA
- - 1.0 mA
3.5 - 6.5 V
- 2.0 2.45 V
- 1500 - pF
- 0.06 -
- 0.03 -
- 0.17 - μs
- 0.24 -
- 0.03 0.15
- 0.30 -
-
-
0.26 -
0.18 -
mJ
- - 2.0 V
- - 200 ns
- - 4.31 /W
- - 4.90 /W
2001-6- 2/6

विन्यास 6 पेज
डाउनलोड[ GT10J321 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
GT10J321TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBTToshiba Semiconductor
Toshiba Semiconductor


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