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IRL2505PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRL2505PBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRL2505PBF?> डेटा पत्रक पीडीएफ

IRL2505PBF pdf
IRL2505PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.008
VGS = 10V, ID = 54A „
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.010 VGS = 5.0V, ID = 54A „
––– ––– 0.013
VGS = 4.0V, ID = 45A „
VGS(th)
Gate Threshold Voltage
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
59 ––– ––– S VDS = 25V, ID = 54A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
VGS = 16V
VGS = -16V
Qg Total Gate Charge
––– ––– 130
ID = 54A
Qgs Gate-to-Source Charge
––– ––– 25 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 67
VGS = 5.0V, See Fig. 6 and 13 „
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 160 –––
––– 43 –––
ns ID = 54A
RG = 1.3Ω, VGS = 5.0V
tf Fall Time
––– 84 –––
RD = 0.50Ω, See Fig. 10 „
LS Internal Source Inductance
––– 7.5 –––
Between lead,
nH and center of die contact
Ciss Input Capacitance
––– 5000 –––
VGS = 0V
Coss Output Capacitance
––– 1100 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 390 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
––– ––– 104…
A
––– ––– 360
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 1.3 V TJ = 25°C, IS = 54A, VGS = 0V „
––– 140 210 ns TJ = 25°C, IF = 54A
––– 650 970 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 240µH
RG = 25, IAS = 54A. (See Figure 12)
ƒ ISD 54A, di/dt 230A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
2 www.irf.com

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