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ABA-52563 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 3.5 GHz Broadband Silicon RFIC Amplifier - Agilent

भाग संख्या ABA-52563
समारोह 3.5 GHz Broadband Silicon RFIC Amplifier
मैन्युफैक्चरर्स Agilent 
लोगो Agilent लोगो 
पूर्व दर्शन
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ABA-52563 pdf
ABA-52563 Absolute Maximum Ratings[1]
Symbol Parameter
Vcc Device Voltage, RF output to ground (T = 25°C)
Pin CW RF Input Power (Vcc = 5V)
Pdiss Total Power Dissipation[3]
Tj Junction Temperature
TSTG Storage Temperature
Units
V
dBm
W
°C
°C
Absolute Max.
+7
+20
0.4
150
-65 to 150
Thermal Resistance[2] (Vcc = 5V):
θjc = 106°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 3.5 mW/°C for Tb > 109°C.
Electrical Specifications
Tc = +25°C, Zo = 50 , Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ. Max.
Std Dev.
Gp[1]
Gp
NF[1]
P1dB[1]
Power Gain (|S21|2)
Power Gain Flatness,
f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
Noise Figure
Output Power at 1dB Gain Compression
dB 20
dB
dB
dBm
21.5
0.5
2.1
3.3 4
9.8
0.2
0.12
0.15
OIP3[1]
Output Third Order Intercept Point
dBm
19.9 0.18
VSWRin[1]
VSWRout[1]
Icc[1]
Input VSWR
Output VSWR
Device Current
1.2
1.4
mA
35 43
0.5
td[1] Group Delay
ps 150
Notes:
1. Measurements taken on 50test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Cblock
RF Output
RF Input
Cblock
RFC
Cbypass
Vcc
Figure 1. ABA-52563 Production Test Circuit.
2

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