DataSheet.in

Si4425DDY डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel 30-V (D-S) MOSFET - Vishay

भाग संख्या Si4425DDY
समारोह P-Channel 30-V (D-S) MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=Si4425DDY?> डेटा पत्रक पीडीएफ

Si4425DDY pdf
Si4425DDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = - 250 µA
VDS = VGS , ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = - 10 V, ID = - 13 A
VGS = - 4.5 V, ID = - 10 A
VDS = - 15 V, ID = - 13 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 15 V, VGS = - 10 V, ID = - 13 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 15 V, VGS = - 4.5 V, ID = - 13 A
f = 1 MHz
VDD = - 15 V, RL = 1.5 Ω
ID - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 15 V, RL = 1.5 Ω
ID - 10 A, VGEN = - 10 V, Rg = 1 Ω
TC = 25 °C
IS = - 10 A, VGS = 0 V
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 30
- 1.2
- 30
0.4
Typ. Max. Unit
- 20
4.9
0.0081
0.0137
40
- 2.5
± 100
-1
-5
0.0098
0.0165
V
mV/°C
V
nA
µA
A
Ω
S
2610
460
395
53
27
8
13
2.1
52
41
36
15
12
9
42
9
80
41
4.2
78
62
54
25
20
15
63
15
- 0.8
20
10
10
9
- 4.7
- 50
- 1.2
30
20
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64732
S09-0314-Rev. A, 02-Mar-09

विन्यास 10 पेज
डाउनलोड[ Si4425DDY Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
Si4425DDYP-Channel 30-V (D-S) MOSFETVishay
Vishay


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English