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K3141 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel MOS FET - Renesas

भाग संख्या K3141
समारोह Silicon N-Channel MOS FET
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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<?=K3141?> डेटा पत्रक पीडीएफ

K3141 pdf
2SK3141
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID(pulse) Note 1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Ratings
30
±20
75
300
75
35
122
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.0
50
Typ
4.0
5.5
80
6800
1550
500
130
16
30
50
370
550
380
1.05
80
Max
±0.1
10
2.5
5.0
8.5
Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 1 m A, VDS = 10 V Note 4
ID = 40 A, VGS = 10 V Note 4
ID = 40 A, VGS = 4 V Note 4
ID = 40 A, VDS = 10 V Note 4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 10 V,
ID = 75 A
VGS = 10 V, ID = 40 A,
RL = 0.25
IF = 75A, VGS = 0
IF = 75A, VGS = 0
diF/ dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 7

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डाउनलोड[ K3141 Datasheet.PDF ]


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