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KF4N80F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC

भाग संख्या KF4N80F
समारोह N-CHANNEL MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स KEC 
लोगो KEC लोगो 
पूर्व दर्शन
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<?=KF4N80F?> डेटा पत्रक पीडीएफ

KF4N80F pdf
KF4N80F
ELECTRICAL CHARACTERISTICS (Tc=25 )
Static
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=800V, VGS=0V
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=3.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=4A
VGS=10V
(Note4,5)
VDD=400V
ID=4A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=4.0A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=4.0A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =30mH, IS=4A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 4.0A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
800 - - V
- 0.8 - V/
- - 10 A
2.5 - 4.5 V
- - 100 nA
- 2.2 2.6
- 17 -
-3-
-8-
- 25 -
- 25 -
- 65 -
- 30 -
- 750 -
- 90 -
- 13 -
nC
ns
pF
- -4
A
- - 16
- - 1.4 V
- 460 -
ns
- 4.0 -
C
1
KF4N80
F 001
2
1 PRODUCT NAME
2 LOT NO
2012. 9. 5
Revision No : 0
2/6

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डाउनलोड[ KF4N80F Datasheet.PDF ]


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