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KF4N20LW डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC

भाग संख्या KF4N20LW
समारोह N-CHANNEL MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स KEC 
लोगो KEC लोगो 
पूर्व दर्शन
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<?=KF4N20LW?> डेटा पत्रक पीडीएफ

KF4N20LW pdf
KF4N20LW
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=200V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 20V, VDS=0V
RDS(ON)
VGS=10V, ID=0.5A
VGS=5V, ID=0.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=150V, ID=3.6A
VGS=5V
(Note4,5)
VDD=100V, ID=3.6A
RG=25
VGS=5V
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=1A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=3.6A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 78mH, IS=1A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS 2A, dI/dt 300A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
200 - - V
- 0.2 - V/
- - 10 A
1.0 - 2.0 V
- - 100 nA
- 0.85 1.05
0.89 1.10
- 2.9 3.8
- 0.6 - nC
- 2.2 -
- 10 -
- 20 -
ns
- 15 -
- 15 -
- 170 220
- 25 - pF
- 4.0 -
- -1
A
- -4
- - 1.4 V
- 100 -
ns
- 0.30 -
C
KF4N20LW
2010. 8. 18
Revision No : 0
2/6

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डाउनलोड[ KF4N20LW Datasheet.PDF ]


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