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HC106M डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2A SCRs - HAOHAI

भाग संख्या HC106M
समारोह 2A SCRs
मैन्युफैक्चरर्स HAOHAI 
लोगो HAOHAI लोगो 
पूर्व दर्शन
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<?=HC106M?> डेटा पत्रक पीडीएफ

HC106M pdf
2A SCRs : 2A 系列 高灵敏度 单向可控硅【規格參數】
RoHS
英文與中文繁體版本
無鉛産品提供SGS環保認證, 符合歐美RoHS環保指令標準
ABSOLUTE RATINGs (Limiting Values)【额定值参数極限值】■THERMAL RESISTANCES【熱阻】■絕緣電阻特徵
SYMBOL
符號表示
Signification in Symbol
器件參數字母符號含義
Test Conditions
測試條件說明
Value
數值
IT(RMS)
IT(AV)
通態電流均方值: On-State RMS Current (Tc=80) 180Conduction Angles
通态平均电流: Average OnState Current (180° Conduction Angles, TC=80°C)
2
2.5
ITSM
通態浪湧電流(通態不重複峰值電流): ½周期, 正弦波波, 不重复, 结温110
Non-Repetitive Peak on-state Current (½ Cycle, Sine Wave, 60Hz, Tj=110°C)
10
IGM
I2t
dIT / dt
VDRM / VRRM
VGM
Visol
PG(AV)
PGM
Tj
門極峰值電流: Forward Peak Gate Current ((Pulse Width 1.0 sec, TC=80°C)
週期電流平方時間積: Circuit Fusing Consideration (t=8.3ms)
通態臨界電流上升率: Repetitive rate of rise of on-state current after triggering (IGT1~IGT3)
斷態重復峰值電壓: Repetitive peak off-state voltages
參考型號對照列表
門極峰值電壓: Peak gate voltage
引脚到外壳最大绝缘电压: R.M.S. isolation voltage from all three terminals to external heatsink
門極平均散耗功率: Average gate power dissipation (Pulse Width 1.0 sec, TC=80°C)
門極最大峰值功率: Peak gate power (Pulse Width 1.0 sec, TC=80°C)
工作結溫: Operating Junction Temperature Range (Rate VRRM & VDRM)
0.2
1.65
50
200~1200
5
---
0.1
5.0
-40 ~ +125
Tstg
TL
Rth(j-mb)
貯存溫度: Storage Temperature Range (In Free Air)
引腳承受焊錫極限溫度: Max.Lead Temperature for Soldering Purposes 1/8" (From Case for 10 Seconds)
熱阻-結到外殼: Thermal Resistance Junction to mounting base
Full Cycle: 全波
Half Cycle: 半波
-40 ~ +150
260
3
3.7
Rth(j-a) 熱阻-結到環境: Thermal ResistanceJunctiontoAmbient
说明/Explain: 电压600V以上规格品种需订制
In Free Air
75
Unit
單位
A
A2ses
A/µs
V
W
/W
STATIC CHARACTERISTICS【静态特性】■DYNAMIC CHARACTERISTICS【動態特性】
SYMBOL
符號表示
Paramenter & Test Conditions
符號含義 及 參數測試條件說明
IGT 門極觸發電流 (VAK=6Vdc, RL=100O)
Tj=+25°C
Tj=-40°C
IDRM
IRRM
反向阻断重复峰值电流:
IPeak Repetitive Forward or Reverse Blocking Current
(VAK=Rated VDRM or VRRM, RGK=1K
Tj=+25°C
Tj=+110°C
IH
IL
VGT
VTM
VGRM
VGD
dVD / dt
維持電流: Holding Current
IVD=12Vdc, IGT=20mA, Gate Open
Tj=+25°C
Tj=-40°C
Tj=+110°C
最大接入電流(闭锁/阻塞电流): Latching Current
(VAK=12V, IGT=20mA
Tj=+25°C
Tj=-40°C
門極觸發電壓: Gate trigger voltage
(Continuous dc,(VAK=6Vdc,RL=100)
Tj=+25°C
Tj=-40°C
通態峰值電壓: Peak Forward On-State Voltage
ITM=4A
门极最高反向電壓: Peak Reverse Gate Voltage
IGR=10A
門極不觸發電壓:Gate NonTrigger Voltage(Continuous dc,VAK=12V,RL=100,TJ=110°C)
斷態臨界電壓上升率:Critical Rate of Rise of OffState Voltage
(VAK=Rated VDRM, Exponential Waveform, RGK=1K,TJ=110°C
Value 数值
Min. Typ. Max.
最小值 典型值 最大值
15 200
35 500
→ → 10
→ → 100
0.19 3.0
0.33 6.0
0.07 2.0
0.20 5.0
0.35 7.0
0.40 0.60 0.80
0.50 0.75 1.00
→ → 2.2
→ → 6.0
0.2
8.0
Unit
單位
µA
mA
V
V/µs
http://www.kkg.com.cn
HAOHAI ELECTRONICS CO., LTD.
注冊商標
KKG@Product Data 2010-03-20
仿冒必究
kkg@kkg.com.cn
HC106 Series : TO-126/TO-225AATO-252/SOT428/DPAK

विन्यास 5 पेज
डाउनलोड[ HC106M Datasheet.PDF ]


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