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AUIRFN8459 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N-Channel MOSFET - International Rectifier

भाग संख्या AUIRFN8459
समारोह Dual N-Channel MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=AUIRFN8459?> डेटा पत्रक पीडीएफ

AUIRFN8459 pdf
  AUIRFN8459
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
––– 3.0
––– 45
––– 105 °C/W
––– 80
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
RG
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
40 ––– –––
––– 0.037 –––
––– 4.8 5.9
2.2 3.0 3.9
66 ––– –––
––– 1.9 –––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
m VGS = 10V, ID = 40A
V VDS = VGS, ID = 50µA
S VDS = 10V, ID = 40A

IDSS Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 150
µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
––– 40 60
ID = 40A
–––
–––
13
14
–––
–––
nC
VDS = 20V
VGS = 10V
––– 26 –––
ID = 40A, VDS =0V, VGS = 10V
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
––– 10 –––
–––
–––
55
25
–––
–––
ns
––– 42 –––
––– 2250 –––
––– 340 –––
––– 215 ––– pF
––– 400 –––
––– 490 –––
   
VDD = 26V
ID = 40A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
––– ––– 70
A
MOSFET symbol
showing the
ISM
Pulsed Source Current
(Body Diode)
––– ––– 320
A
integral reverse
p-n junction diode.
VSD
dv/dt
trr  
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.3 V TJ = 25°C, IS = 40A, VGS = 0V
––– 7.0 ––– V/ns TJ = 175°C, IS= 40A, VDS = 40V
–––
–––
–––
–––
22
23
17
17
–––
–––
–––
–––
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 40A
di/dt = 100A/µs
––– 1.0 ––– A TJ = 25°C
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July 29, 2014

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