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IRFB4212PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Digital Audiio MOSFET - International Rectifier

भाग संख्या IRFB4212PbF
समारोह Digital Audiio MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFB4212PbF pdf
IRFB4212PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
LD
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
100 ––– –––
V VGS = 0V, ID = 250µA
––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
e––– 58 72.5 mVGS = 10V, ID = 13A
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
––– -13 ––– mV/°C
––– ––– 20
µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
11 ––– –––
S VDS = 50V, ID = 13A
––– 15 23
––– 3.3 –––
VDS = 80V
––– 1.4 ––– nC VGS = 10V
––– 6.9 –––
ID = 13A
––– 3.4 –––
See Fig. 6 and 19
––– 8.3 –––
––– 2.2 –––
––– 7.7 –––
––– 28 –––
––– 14 –––
––– 3.9 –––
ÃeVDD = 50V, VGS = 10V
ID = 13A
ns RG = 2.5
––– 550 –––
––– 66 –––
––– 35 –––
VGS = 0V
pF VDS = 50V
ƒ = 1.0MHz,
See Fig.5
––– 350 –––
––– 4.5 –––
VGS = 0V, VDS = 0V to 80V
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÃgIAR Avalanche Current
gEAR Repetitive Avalanche Energy
Typ.
–––
Max.
25
See Fig. 14, 15, 17a, 17b
Units
mJ
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS @ TC = 25°C Continuous Source Current
––– ––– 18
MOSFET symbol
(Body Diode)
A showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 57
––– ––– 1.3
––– 41 62
––– 69 100
integral reverse
p-n junction diode.
eV TJ = 25°C, IS = 13A, VGS = 0V
ns TJ = 25°C, IF = 13A
enC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.32mH, RG = 25, IAS = 13A.
ƒ Pulse width 400µs; duty cycle 2%.
2
„ Rθ is measured at TJ of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
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