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HFS7N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel MOSFET - SemiHow

भाग संख्या HFS7N60
समारोह 600V N-Channel MOSFET
मैन्युफैक्चरर्स SemiHow 
लोगो SemiHow लोगो 
पूर्व दर्शन
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<?=HFS7N60?> डेटा पत्रक पीडीएफ

HFS7N60 pdf
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
RDS(ON) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 3.5 A
2.5
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS
/ΔTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 ㎂, Referenced to25℃
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 7.0 A,
RG = 25
(Note 4,5)
VDS = 480V, ID = 7.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 7.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
0.96 1.2
V
-- -- V
0.65 -- V/℃
-- 1
-- 10
-- 100
-- -100
970 1260
80 110
17 22
20 40
55 110
90 180
60 120
40 52
6.5 --
16.5 --
nC
nC
nC
-- 7.0
-- 28
-- 1.4
380 --
4.1 --
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=15.7mH, IAS=7.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD7.0A, di/dt300A/μs, VDDBVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Decy 2005

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