DataSheet.in

HFS7N80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 800V N-Channel MOSFET - SemiHow

भाग संख्या HFS7N80
समारोह 800V N-Channel MOSFET
मैन्युफैक्चरर्स SemiHow 
लोगो SemiHow लोगो 
पूर्व दर्शन
1 Page
		
<?=HFS7N80?> डेटा पत्रक पीडीएफ

HFS7N80 pdf
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 3.5 A
2.5
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 400 V, ID = 7.0 A,
RG = 25 ש
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 640V, ID = 7.0 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 7.0 A, VGS = 0 V
diF/dt = 100 A/ȝs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
1.55 1.9
V
ש
-- -- V
0.93 -- ·͠ఁ
-- 1
-- 10
-- 100
-- -100
1500
120
18
1950
155
24
40 80
120 240
60 120
70 140
35 45
10 --
13 --
Οʹ
Οʹ
Οʹ
-- 7.0
-- 28
-- 1.4
780 --
9.0 --
A
V
ȝC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=22.2mH, IAS=7.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”7.0A, di/dt”200A/ȝs, VDD”BVDSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ” 300ȝs, Duty Cycle ” 2%
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡

विन्यास 7 पेज
डाउनलोड[ HFS7N80 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
HFS7N80800V N-Channel MOSFETSemiHow
SemiHow


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English