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BTA08-600BW3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Triacs - ON Semiconductor

भाग संख्या BTA08-600BW3G
समारोह Triacs
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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<?=BTA08-600BW3G?> डेटा पत्रक पीडीएफ

BTA08-600BW3G pdf
BTA08600BW3G, BTA08800BW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase (AC)
JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 seconds
Symbol
RqJC
RqJA
TL
Value
2.5
63
260
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
Peak On-State Voltage (Note 2)
(ITM = ± 11 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VTM − −
IGT
2.5
2.5
2.5
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA)
Latching Current (VD = 12 V, IG = 60 mA)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
IH − −
IL
−−
−−
−−
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VGT
0.5
0.5
0.5
Gate NonTrigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VGD
0.2
0.2
0.2
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
Critical Rate of Rise of OnState Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr 100 ns)
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
(dI/dt)c
dI/dt
dV/dt
1.5
2000
Max
0.005
2.0
1.55
50
50
50
60
70
90
70
1.7
1.1
1.1
50
Unit
°C/W
°C
Unit
mA
V
mA
mA
mA
V
V
A/ms
A/ms
V/ms
http://onsemi.com
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