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STE339S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics

भाग संख्या STE339S
समारोह N-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स SamHop Microelectronics 
लोगो SamHop Microelectronics लोगो 
पूर्व दर्शन
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<?=STE339S?> डेटा पत्रक पीडीएफ

STE339S pdf
STE339S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=6A
VGS=4.5V , ID=4.6A
VDS=10V , ID=6A
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=15V,ID=6A,VGS=10V
VDS=15V,ID=6A,VGS=4.5V
VDS=15V,ID=6A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
Typ
1.8
9
12.5
29
870
163
126
18
18.2
42
18
14.7
7.7
1.7
4.1
0.79
Max Units
1
±100
V
uA
nA
3V
10.5 m ohm
15 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.2 V
Dec,04,2012
2 www.samhop.com.tw

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डाउनलोड[ STE339S Datasheet.PDF ]


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