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STD10N25 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics

भाग संख्या STD10N25
समारोह N-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स SamHop Microelectronics 
लोगो SamHop Microelectronics लोगो 
पूर्व दर्शन
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<?=STD10N25?> डेटा पत्रक पीडीएफ

STD10N25 pdf
STU10N25
STD10N25
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=10mA
VDS=200V , VGS=0V
VGS= ±20V , VDS=0V
250
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=4.5A
VDS=10V , ID=4.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=125V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=125V,ID=1A,VGS=10V
VDS=125V,ID=1A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4.5A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Drain current limited by maximum junction temperature.
Typ Max Units
1
±100
V
uA
nA
2.2 3
V
206 258 m ohm
6.6 S
1610
78
58
pF
pF
pF
37 ns
29 ns
55 ns
14 ns
22 nC
2.8 nC
7.4 nC
0.81 1.3
V
Oct,24,2013
2 www.samhop.com.tw

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डाउनलोड[ STD10N25 Datasheet.PDF ]


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