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STD04N20 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics

भाग संख्या STD04N20
समारोह N-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स SamHop Microelectronics 
लोगो SamHop Microelectronics लोगो 
पूर्व दर्शन
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<?=STD04N20?> डेटा पत्रक पीडीएफ

STD04N20 pdf
STU/D04N20
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=160V , VGS=0V
VGS= ±20V , VDS=0V
200
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=2A
VGS=4.5V , ID=2A
VDS=10V , ID=2A
VDS=25V,VGS=0V
f=1.0MHz
VDD=100V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=100V,ID=1A,VGS=10V
VDS=100V,ID=1A,VGS=4.5V
VDS=100V,ID=1A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=0.5A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
Typ Max Units
1
±100
V
uA
nA
1.8 2.5
V
1.4 1.8 ohm
1.6 2.0 ohm
7.5 S
385 pF
21 pF
12 pF
8.3 ns
10 ns
20 ns
4.5 ns
5.7 nC
3 nC
0.9 nC
1.2 nC
0.81 1.3
V
Oct,26,2012
2 www.samhop.com.tw

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डाउनलोड[ STD04N20 Datasheet.PDF ]


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STD04N20N-Channel Logic Level Enhancement Mode Field Effect TransistorSamHop Microelectronics
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