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STD03L07 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics

भाग संख्या STD03L07
समारोह N-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स SamHop Microelectronics 
लोगो SamHop Microelectronics लोगो 
पूर्व दर्शन
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<?=STD03L07?> डेटा पत्रक पीडीएफ

STD03L07 pdf
STU03L07
STD03L07
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=56V , VGS=0V
VGS= ±20V , VDS=0V
70
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=4.5A
VGS=4.5V , ID=4A
VDS=10V , ID=4.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=35V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=35V,ID=4.5A,VGS=10V
VDS=35V,ID=4.5A,VGS=4.5V
VDS=35V,ID=4.5A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Drain current limited by maximum junction temperature.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13)
Typ Max Units
1
±100
V
uA
nA
23V
182 228 m ohm
198 267 m ohm
14 S
480 pF
30 pF
22 pF
10.5 ns
10.2 ns
19 ns
8.2 ns
7.8 nC
4 nC
1.2 nC
2.2 nC
0.81 1.3
V
Apr,10,2014
2 www.samhop.com.tw

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