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STD06L01 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Enhancement Mode Field Effect Transistor - SamHop Microelectronics

भाग संख्या STD06L01
समारोह N-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स SamHop Microelectronics 
लोगो SamHop Microelectronics लोगो 
पूर्व दर्शन
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<?=STD06L01?> डेटा पत्रक पीडीएफ

STD06L01 pdf
STU06L01
STD06L01
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=10mA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3A
VGS=4.5V , ID=2A
VDS=10V , ID=3A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=3A,VGS=10V
VDS=50V,ID=3A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Drain current limited by maximum junction temperature.
Typ Max Units
1
±100
V
uA
nA
23V
282 353 m ohm
410 553 m ohm
4.5 S
273 pF
25 pF
18 pF
8.5 ns
9.6 ns
15.2 ns
2.5 ns
4.3 nC
1 nC
1.6 nC
0.8 1.3 V
Oct,30,2013
2 www.samhop.com.tw

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STD06L01N-Channel Logic Level Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics


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