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AP9469GJ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP9469GJ
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP9469GJ?> डेटा पत्रक पीडीएफ

AP9469GJ pdf
AP9469GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=12A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=8A
VDS=VGS, ID=250uA
VDS=10V, ID=12A
VDS=40V, VGS=0V
VDS=32V, VGS=0V
VGS=±20V
ID=12A
VDS=30V
VGS=4.5V
VDS=20V
ID=12A
RG=3.3Ω,VGS=10V
RD=1.67Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
40 - - V
- 0.03 - V/
- - 50 mΩ
- - 72 mΩ
1 - 3V
- 11 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 6 10 nC
- 2 - nC
- 3 - nC
- 7 - ns
- 21 - ns
- 14 - ns
- 2 - ns
- 480 770 pF
- 70 - pF
- 50 - pF
- 1 1.5 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=12A, VGS=0V
IS=12A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 21 - ns
- 15 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4

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