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AP9466GS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP9466GS
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP9466GS?> डेटा पत्रक पीडीएफ

AP9466GS pdf
AP9466GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=26A
VGS=4.5V, ID=16A
VDS=VGS, ID=250uA
VDS=10V, ID=26A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ±20V
ID=26A
VDS=32V
VGS=4.5V
VDS=20V
ID=26A
RG=3.3Ω,VGS=10V
RD=0.77Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
40 -
-V
- - 13.5 mΩ
- - 21 mΩ
1 - 3V
- 24.5 -
- -1
S
uA
- - 25 uA
- - ±100 nA
- 13.5 22 nC
- 2.6 - nC
- 9.4 - nC
- 7 - ns
- 73 - ns
- 20 - ns
- 8 - ns
- 800 1280 pF
- 170 - pF
- 140 - pF
- 1.3 2 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=26A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 27 - ns
- 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4

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