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AP3402GEH डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP3402GEH
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP3402GEH?> डेटा पत्रक पीडीएफ

AP3402GEH pdf
AP3402GEH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=25A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=25A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS=±20V
ID=25A
VDS=25V
VGS=4.5V
VDS=15V
ID=25A
RG=3.3Ω,VGS=10V
RD=0.6Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
35 -
-V
- 0.03 - V/
- - 18 mΩ
- - 32 mΩ
1 - 3V
- 22 -
S
- - 1 uA
- - 25 uA
- - ±30 uA
- 10.5 17 nC
- 4 - nC
- 6 - nC
- 9 - ns
- 78 - ns
- 19 - ns
- 4 - ns
- 950 1520 pF
- 160 - pF
- 110 - pF
- 2.5 3.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=25A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 22 - ns
- 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
Downloaded from Elcodis.com electronic components distributor
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