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IRF5800PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF5800PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF5800PBF?> डेटा पत्रक पीडीएफ

IRF5800PBF pdf
IRF5800PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.02 –––
––– 0.085
––– 0.150
––– –––
––– –––
––– -1.0
––– -5.0
––– -100
––– 100
11.4 17
2.3 –––
2.2 –––
11.4 17
11 17
24 36
14 20
535 –––
94 –––
68 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
VGS = -10V, ID = -4.0A ‚
VGS = -4.5V, ID = -3.0A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -4.0A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -4.0A
VDS = -16V
VGS = -10V ‚
VDD = -15V, VGS = -10V
ID = -1.0A
RG = 6.0
RD = 15, ‚
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
19
16
Max.
-2.0
-32
-1.2
28
24
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 5sec.
„ Starting TJ = 25°C, L = 2.5mH
RG = 25, IAS = -4.0A. (See Fig 10 )
2 www.irf.com

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