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GT10Q301 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - Toshiba Semiconductor

भाग संख्या GT10Q301
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=GT10Q301?> डेटा पत्रक पीडीएफ

GT10Q301 pdf
GT10Q301
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Peak forward voltage
Reverse recovery time
Thermal resistance (IGBT)
Thermal resistance (diode)
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
VF
trr
Rth (j-c)
Rth (j-c)
VGE = ±20 V, VCE = 0
VCE = 1200 V, VGE = 0
IC = 1 mA, VCE = 5 V
IC = 10 A, VGE = 15 V
VCE = 50 V, VGE = 0, f = 1 MHz
Inductive load
VCC = 600 V, IC = 10 A
VGG = ±15 V, RG = 75
(Note)
IF = 10 A, VGE = 0
IF = 10 A, di/dt = 200 A/µs
4.0
Note: Switching time measurement circuit and input/output waveforms
Typ.
2.1
600
0.07
0.30
0.16
0.50
Max
±500
1.0
7.0
2.7
0.32
3.0
350
0.89
1.79
Unit
nA
mA
V
V
pF
µs
V
ns
°C/W
°C/W
VGE
RG
IC
RG
VCC
L
VCE
VGE
0
90%
IC
90%
0 VCE
10%
10%
td (off)
tf
toff
10%
90%
10%
td (on)
tr
10%
ton
2 2002-10-29

विन्यास 7 पेज
डाउनलोड[ GT10Q301 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
GT10Q301Insulated Gate Bipolar TransistorToshiba Semiconductor
Toshiba Semiconductor


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