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GT15M321 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - Toshiba Semiconductor

भाग संख्या GT15M321
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=GT15M321?> डेटा पत्रक पीडीएफ

GT15M321 pdf
ELECTRICAL CHARACTERISTICS (Ta=25°C)
GT15M321
CHARACTERISTIC
Gate Leakage Current
Collector Cutoff Current
Gate-Emitter Cutoff Voltage
CollectorEmitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turnon Time
Fall Time
Turnoff Time
Emitter-Collector Forward Voltage
Reverse Recovery Time
Thermal Resistance
Thermal Resistance
SYMBOL
TEST CONDITION
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
VF
trr
Rth (jc)
Rth (jc)
VGE = ±25 V, VCE = 0
VCE = 900 V, VGE = 0
IC = 15 mA, VCE = 5 V
IC = 15 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
IEC = 15 A, VGE = 0
IF = 15 A, VGE = 0
di / dt = 20 A / µs
IGBT
Diode
MIN TYP. MAX UNIT
― ― ±500 nA
― ― 1.0 mA
3.0 6.0 V
1.8 2.5 V
1200
pF
0.20
0.30
0.20 0.40 µs
0.50
1.5 2.0 V
0.7 2.5 ms
― ― 2.27 °C / W
― ― 2.27 °C / W
2 2002-02-06

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डाउनलोड[ GT15M321 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
GT15M321Insulated Gate Bipolar TransistorToshiba Semiconductor
Toshiba Semiconductor


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