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K3155 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SK3155 - Hitachi Semiconductor

भाग संख्या K3155
समारोह 2SK3155
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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<?=K3155?> डेटा पत्रक पीडीएफ

K3155 pdf
2SK3155
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Electrical Characteristics (Ta = 25°C)
Ratings
150
±20
15
60
15
15
16
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
150
±20
1.0
8.5
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 4. Pulse test
Typ
0.10
0.12
14
850
300
160
13
100
195
110
0.9
140
Max
±10
10
2.5
0.13
0.15
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 VNote4
ID = 8 A, VGS = 4 V Note4
ID = 8 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 8 A, VGS = 10 V
RL = 3.75
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
diF/ dt = 50 A/ µs
2

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डाउनलोड[ K3155 Datasheet.PDF ]


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