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S1A0134A01 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL PRE-POWER AMP - Samsung semiconductor

भाग संख्या S1A0134A01
समारोह DUAL PRE-POWER AMP
मैन्युफैक्चरर्स Samsung semiconductor 
लोगो Samsung semiconductor लोगो 
पूर्व दर्शन
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S1A0134A01 pdf
S1A0134A01
DUAL PRE-POWER AMP
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Supply Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
VCC
PD
TOPR
TSTG
Value
7
750
20 — +75
40 — +125
Unit
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(VCC = 3V, Ta = 25°C, f = 1kHz, RL1 = 10k, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Quiescent Circuit Current
ICCQ1
ICCQ2
VI = 0, VOL = MIN
VI = 0, VOL = MAX
Cross Talk
CT RG = 2.2k, VO = 10dBm
Min.
34
Typ.
9
11
40
Max.
13
Unit
mA
mA
dB
PRE-AMPLIFIER SECTION
(VCC = 3V, Ta = 25°C, f =1kHz, RL1 =10k, unless otherwise specified)
Characteristic
Symbol
Test conditions
Open Loop Voltage Gain
GVO
VI = 0.2mV
Closed Loop Voltage Gain
GVC1 VO = 10dBm, NAB 1kHz
Output Voltage
Total Harmonic Distortion
VO
THD1
THD = 1%
VO = 10dBm
Ripple Rejection Ratio
RR1
RG = 2.2k
VR = 20dBm, fR = 100Hz
Equivalent Input
Noise Voltage
VNI
RG = 2.2k, BW = 30 20kHz
Gain for NAB 1kHz
Min.
55
600
Typ.
62
33
720
0.04
Max.
0.1
Unit
dB
dB
mV
%
46 dB
1.2 2.0 µV
2

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डाउनलोड[ S1A0134A01 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
S1A0134A01DUAL PRE-POWER AMPSamsung semiconductor
Samsung semiconductor


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