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ME20N03 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement MOSFET - Matsuki

भाग संख्या ME20N03
समारोह N-Channel Enhancement MOSFET
मैन्युफैक्चरर्स Matsuki 
लोगो Matsuki लोगो 
पूर्व दर्शन
1 Page
		
<?=ME20N03?> डेटा पत्रक पीडीएफ

ME20N03 pdf
N-Channel Enhancement MOSFET
ME20N03
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
VGS(th)
BVDSS
IGSS
Parameter
Gate Threshold Voltage
Drain-Source Breakdown Voltage
Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistance
VSD Diode Forward Voltage
DYNAMIC
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg Gate Resistance
Qg(4.5V) Total Gate Charge
Qg(10V) Total Gate Charge
Qgs Gate-Source Charge
Qgd
td(on)
tr
td(off)
tf
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
Limit
Min Typ Max Unit
VDS=VGS, ID=250μA
VGS=0V, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VDS=30V, VGS=0V
TJ=55
VGS=10V, ID= 15A
VGS=4.5V, ID= 15A
IS=1A, VGS=0V
12
30
3
V
±100 nA
1
μA
5
11 15
mΩ
16 20
0.75 1.1
V
VDS=15V, VGS=0V, f =1MHz
VDS=0, VGS=0V, f =1MHz
VDS=15V, VGS=4.5V, ID=10A
VDS=15V, VGS=10V, ID=10A
VDS=15V, RL =1.5Ω
VGS=1A, RGEN=3Ω
RG=6Ω
700 800
120 pF
35
0.9 Ω
11 14
20 26
nC
5
4.9
14 17
12 15
ns
43 55
46
Sep,2008-Ver2.0
02

विन्यास 5 पेज
डाउनलोड[ ME20N03 Datasheet.PDF ]


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