DataSheet.in

FDD7N60NZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel UniFETTM II MOSFET - Fairchild Semiconductor

भाग संख्या FDD7N60NZ
समारोह N-Channel UniFETTM II MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD7N60NZ?> डेटा पत्रक पीडीएफ

FDD7N60NZ pdf
Package Marking and Ordering Information
Part Number
FDD7N60NZTM
FDU7N60NZTU
Top Mark
FDD7N60NZ
FDU7N60NZ
Package
DPAK
IPAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
75 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±25 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 2.75 A
VDS = 20 V, ID = 2.75 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 400 V, ID = 5.5 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250 V, ID = 5.5 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 5.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 5.5 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 23 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 5.5 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
600
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
1.05
7.3
550
70
7
13
3
5.6
17.5
30
40
25
-
-
-
250
1.4
Max. Unit
-V
- V/oC
50
100
μA
±10 μA
5.0 V
1.25 Ω
-S
730 pF
90 pF
10 pF
17 nC
- nC
- nC
45 ns
70 ns
90 ns
60 ns
5.5 A
22 A
1.4 V
- ns
- μC
©2011 Fairchild Semiconductor Corporation
FDD7N60NZ / FDU7N60NZTU Rev. C1
2
www.fairchildsemi.com

विन्यास 9 पेज
डाउनलोड[ FDD7N60NZ Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDD7N60NZN-Channel UniFETTM II MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English