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BCW60A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SILICON PLANAR EPITAXIAL TRANSISTORS - CDIL

भाग संख्या BCW60A
समारोह SILICON PLANAR EPITAXIAL TRANSISTORS
मैन्युफैक्चरर्स CDIL 
लोगो CDIL लोगो 
पूर्व दर्शन
1 Page
		
<?=BCW60A?> डेटा पत्रक पीडीएफ

BCW60A pdf
BCW60A BCW60B
BCW60C BCW60D
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Base current
Total power dissipation up to Tamb: 25 °C
Storage temperature
Junction temperature
VCES
VCE0
VEB0
IC
IB
Ptot
Tstg
Tj
max. 32 V
max. 32 V
max. 5 V
max. 200 mA
max. 50 mA
max. 250 mW
–55 to +150° C
max. 150 ° C
THERMAL RESISTANCE
From junction to ambient*
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Collector–emitter cut–off current
VBE = 0; VCE = 32 V
VBE = 0; VCE = 32V; Tamb = 150°C
Emitter–base cut–off current
IC = 0; VEB = 4 V
Saturation voltages
at IC = 10 mA; IB = 0,25 mA
Rth j–a =
500 K/W
ICES
ICES
<
<
20 nA
20 mA
IEB0 <
20 nA
VCEsat 0,05 to 0,35 V
VBEsat 0,6 to 0,85 V
at IC = 50 mA; IB = 1,25 mA
VCEsat 0,1 to 0,55 V
VBEsat 0,7 to 1,05 V
Transition frequency at f = 100 MHz ·
IC = 10 mA; VCE = 5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 10V
Emitter capacitance at f = 1 MHz
IC = Ic = 0; VEB = 0,5 V
Noise figure at RS = 2 kW
IC = 200 m.mA; VCE = 5 V; f: 1 kHz; B = 200 Hz
fT
Cc
Ce
F
D.C. current gain
VCE = 5 V; IC = 10 mA
VCE = 5 V; IC: 2 mA
BCW60A 60B
hFE >
hFE >
<
– 20
120 180
220 310
VCE = 1 V; IC: 50 mA
Input impedance
VCE = 5 V; IC = 2 mA, f = 1 kHz
hFE
hie
> 50 70
typ. 2,7 3,6
>
typ.
typ.
typ.
typ.
<
60C
40
250
460
90
4,5
125 MHz
250 MHz
2,5 pF
8 pF
2 dB
6 dB
60D
100
380
630
100
7,5 kW
Continental Device India Limited
Data Sheet
Page 2 of 3

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