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D2101 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SD2101 - Hitachi Semiconductor

भाग संख्या D2101
समारोह 2SD2101
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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<?=D2101?> डेटा पत्रक पीडीएफ

D2101 pdf
2SD2101
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC
PC * 1
Tj
Tstg
Rating
200
200
7
10
15
2
30
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
200
Collector to emitter breakdown V(BR)CEO
voltage
200
Collector to emitter sustain
voltage
VCEO(SUS) 170
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Note: 1. Pulse test.
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
1500
Typ
Max Unit
—V
—V
—V
—V
10 µA
50
1.5 V
3.0
2.0 V
3.5
Test conditions
IC = 0.1 mA, IE = 0
IC = 25 mA, RBE =
IC = 5 A, L = 5 mH
IE = 50 mA, IC = 0
VCB = 180 V, IE = 0
VCE = 180 V, RBE =
VCE = 3 V, IC = 5 A*1
IC = 5 A, IB = 10 mA*1
IC = 10 A, IB = 100 mA*1
IC = 5 A, IB = 10 mA*1
IC = 10 A, IB = 100 mA*1
2

विन्यास 6 पेज
डाउनलोड[ D2101 Datasheet.PDF ]


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