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IRF530 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRF530
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF530?> डेटा पत्रक पीडीएफ

IRF530 pdf
IRF530, SiHF530
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 8.4 Ab
VDS = 50 V, ID = 8.4 Ab
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
100 -
-V
- 0.12 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
-
-
0.16
5.1 -
-S
- 670 -
- 250 - pF
- 60 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - - 26
ID = 14 A, VDS = 80 V,
Qgs
VGS = 10 V
see fig. 6 and 13b
-
- 5.5 nC
Qgd - - 11
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 50 V, ID = 14 A
Rg = 12 , RD = 3.6, see fig. 10b
- 10 -
- 34 -
ns
- 23 -
- 24 -
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 -
nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
- - 14
A
- - 56
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
- - 2.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μsb
-
150 280 ns
Qrr
-
0.85 1.7
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91019
S11-0510-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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