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SUB70N03-09BP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET PWM Optimized - Vishay

भाग संख्या SUB70N03-09BP
समारोह N-Channel MOSFET PWM Optimized
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=SUB70N03-09BP?> डेटा पत्रक पीडीएफ

SUB70N03-09BP pdf
SUP/SUB70N03-09BP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125_C
VDS = 24 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
30
0.8
70
20
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Gate Resistance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 5 V, ID = 70 A
VDD = 15 V, RL = 0.21 W
ID ] 70 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
IS
ISM
VSD IF = 70 A, VGS = 0 V
trr IF = 70 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Typ Max Unit
2.0
"100
1
50
150
0.007
0.010
45
0.009
0.0135
0.017
0.013
V
nA
mA
A
W
S
1500
530
240
15.5
5
6
10
8
25
9
2
19
18
15
45
16
pF
nC
ns
W
70
A
200
1.1 1.5 V
30 60 ns
www.vishay.com
2
Document Number: 71229
S-20102Rev. B, 11-Mar-02

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