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G30N60B3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HGTG30N60B3 - Fairchild Semiconductor

भाग संख्या G30N60B3
समारोह HGTG30N60B3
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=G30N60B3?> डेटा पत्रक पीडीएफ

G30N60B3 pdf
HGTG30N60B3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 12 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Ratings
600
60
30
220
20
30
60 A at 600 V
208
1.67
100
-55 to 150
260
4
10
UNIT
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
s
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and oper ation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360 V, TJ = 125oC, RG = 3 
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250 A, VGE = 0 V
IC = -10 mA, VGE = 0 V
VCE = BVCES
TC = 25oC
TC = 150oC-
IC = IC110,
VGE = 15 V
TC = 25oC
TC = 150oC-
IC = 250 A, VCE = VGE
VGE = 20 V
TJ = 150oC,
RG = 3 
VGE = 15 V,
L = 100 H
VCE (PK) = 480 V
VCE (PK) = 600 V
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
VGE = 15 V
VGE = 20 V
IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15 V
RG= 3
L = 1 mH
Test Circuit (Figure 17)
MIN
600
20
-
-
4.2
-
200
60
-7
-
-
-3
-2
-
-5
-
-
-
TYP
-
-
-
-
1.45
1.7
5.0
-
-
-
.2
170
230
6
5
137
8
500
550
680
MAX
-
-
250
3.0
1.9
2.1
6.0
250
-
-
-
190
250
-
-
-
-
-
800
900
UNIT
V
V
A
mA
V
V
V
nA
A
A
V
nC
nC
ns
ns
ns
ns
J
J
J
©2001 Fairchild Semiconductor Corporation
HGTG30N60B3 Rev. C1
2
www.fairchildsemi.com

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