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ME08N20-G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel 200V (D-S) MOSFET - Matsuki

भाग संख्या ME08N20-G
समारोह N-Channel 200V (D-S) MOSFET
मैन्युफैक्चरर्स Matsuki 
लोगो Matsuki लोगो 
पूर्व दर्शन
1 Page
		
<?=ME08N20-G?> डेटा पत्रक पीडीएफ

ME08N20-G pdf
N- Channel 200V (D-S) MOSFET
ME08N20/ME08N20-G
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol Parameter
Conditions
Min T yp Max
STATIC
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 200
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250μA 2
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
RDS(ON)
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
VDS=200V, VGS=0V
VGS=10V, ID= 5A
VSD Diode Forward Voltage
IS=9A, VGS=0V
4
±100
1
0.35 0.40
1.5
DYNAMIC
Qg Total Gate Charge
Qgs Gate-So
urce Charge
VDD=160V, VGS=10V, ID=9A
51.7
12.7
Qgd Gate-Drain
Charge
16.3
Ciss Input
capacitance
2610
Coss Out
put Capacitance
VDS=25V, VGS=0V, f=1MHz
68
Crss Rev
erse Transfer Capacitance
21
td(on)
Turn-On Delay Time
26.9
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDS=160V, VGS=10V,
RG=4.7, RL=17.7
37.2
63.5
tf Turn-On Fall Time
43.8
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b . Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
V
nc
pF
ns
Nov, 2012-Ver1.6
02

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