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TK80E08K3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Field Effect Transistor Silicon N Channel MOS Type - Toshiba

भाग संख्या TK80E08K3
समारोह Field Effect Transistor Silicon N Channel MOS Type
मैन्युफैक्चरर्स Toshiba 
लोगो Toshiba लोगो 
पूर्व दर्शन
1 Page
		
<?=TK80E08K3?> डेटा पत्रक पीडीएफ

TK80E08K3 pdf
Target Specification
Electrical Characteristics (Ta = 25°C)
TK80E08K3
Characteristics S
ymbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±20 V, VDS = 0 V
VDS = 75 V, VDS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -20 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 40 A
VDS = 10 V, ID = 40 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
Switching time
Turnon time
Fall time
Turnoff time
tr
ton
tf
toff
10 V
VGS
0V
4.7
ID = 40 A VOUT
0.9
Duty <= 1%, tw = 10 µs
VDD ∼− 35 V
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
Qg
Qgs
Qgd
VDD 75 V, VGS = 10 V, ID = 80 A
Min Typ.
——
——
75 —
45 —
2.0 —
— 7.5
67 135
3600
350
— 500
Max
±1
10
4.0
9.0
Unit
µA
µA
V
V
V
m
S
pF
95 —
135 —
85 —
ns
— 220
75 —
44 — nC
— 31
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics S
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
ymbol
Test Condition
IDR
IDRP
VDSF
trr
Qrr
IDR = 80 A, VGS = 0 V
IDR = 80 A, VGS = 0 V
dIDR / dt = 100 A / µs
Min Typ. Max Unit
— — 80 A
— — 240 A
— — 1.5 V
— 45 — ns
— 72
— µC
Marking
K80E08K3
Part No. (or abbreviation code)
Lot No.
2
2009-4-2

विन्यास 3 पेज
डाउनलोड[ TK80E08K3 Datasheet.PDF ]


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TK80E08K3Field Effect Transistor Silicon N Channel MOS TypeToshiba
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