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SSM3J334R डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power Management Switch Applications - Toshiba Semiconductor

भाग संख्या SSM3J334R
समारोह Power Management Switch Applications
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=SSM3J334R?> डेटा पत्रक पीडीएफ

SSM3J334R pdf
SSM3J334R
Electrical Characteristics (Ta = 25°C)
Characteristic S
ymbol
Test Conditions Min
Typ. Max Unit
Drain-Source breakdown voltage
V (BR) DSS ID = -10 mA, VGS = 0 V
V (BR) DSX ID = -10 mA, VGS = 10 V
.(Note 5)
-30
-21
V
V
Drain cut-off current
IDSS
VDS = -30 V, VGS = 0 V
⎯ ⎯ -1
μA
Gate leakage current
IGSS VGS = ±16 V, VDS = 0 V
⎯ ⎯ ±10 μA
Gate threshold voltage
Vth VDS = -10 V, ID = -100 μA -0.8
-2.0
V
Forward transfer admittance
YfsVDS = -10 V, ID = -1.0 A
(Note 4) 2.3 4.6 S
ID = -3.0 A, VGS = -10 V
(Note 4) 54 71
Drain–source ON-resistance
RDS (ON) ID = -2.0 A, VGS = -4.5 V
(Note 4)
80 105 mΩ
ID = -1.0 A, VGS = -4.0 V
(Note 4)
89 136
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS = -15 V, VGS = 0 V
f = 1 MHz
280
55
40
pF
Switching time
Turn-on time
Turn-off time
ton VDD = -15 V, ID = -1.0 A
toff VGS = 0 to -4.5 V, RG = 10 Ω
13
ns
22
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs1
Qgd
VDD = -15 V, ID = -4.0 A,
VGS = -10 V
5.9
0.8
1.2
nC
Drain-Source forward voltage
VDSF ID = 4.0 A, VGS = 0 V
(Note 4)
0.9 1.2
V
Note4: Pulse test
Note5: If a for ward bi as is appli ed bet ween gate and sourc e, this devic e enters V (BR)DSX mode. Note that the
drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test Circuit
0 IN
4.5V
10 μs
VDD = -15 V
RG = 10 Ω
Duty 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
OUT
RL
VDD
(b) VIN
0V
4.5 V
(c) VOUT VDS (ON)
VDD
90%
10%
90%
10%
tr
ton toff
tf
Notice on Usage
Let Vth be the voltage applied between gate and sour ce that causes the drain current (ID) to be l ow (-100μA for the
SSM3J334R). Then, for norma l switching operation, VGS(on) must be h igher than V th, and VGS(off) must be lo wer than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When han dling indivi dual de vices that are not yet mount ed on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
2 2014-03-01

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भाग संख्याविवरणविनिर्माण
SSM3J334RPower Management Switch ApplicationsToshiba Semiconductor
Toshiba Semiconductor


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