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Si7856ADP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel 30-V (D-S) MOSFET - Vishay Siliconix

भाग संख्या Si7856ADP
समारोह N-Channel 30-V (D-S) MOSFET
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
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<?=Si7856ADP?> डेटा पत्रक पीडीएफ

Si7856ADP pdf
Si7856ADP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on) V
DS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 25 A
VGS = 4.5 V, ID = 19 A
Forward Transconductancea
gfs VDS = 15 V, ID = 25 A
Diode Forward Voltagea
VSD IS = 2.9 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 25 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
1.0
30
Typ.
Max.
3.0
± 100
1
5
0.0029
0.0036
95
0.7
0.0037
0.0048
1.1
Unit
V
nA
µA
A
Ω
S
V
39 55
13.5
11.5
0.5 1.0 1.5
21 35
15 25
100 150
30 45
50 80
nC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
VGS = 10 thru 4 V
50
60
50
40 40
30 30
20
3V
10
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
20
10
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
2
Document Number: 73157
S-80438-Rev. C, 03-Mar-08

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Si7856ADPN-Channel 30-V (D-S) MOSFETVishay Siliconix
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