DataSheet.in

IXYB82N120C3H1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High-Speed IGBT - IXYS Corporation

भाग संख्या IXYB82N120C3H1
समारोह High-Speed IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXYB82N120C3H1?> डेटा पत्रक पीडीएफ

IXYB82N120C3H1 pdf
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 82A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
30 50
S
4060
285
110
pF
pF
pF
215 nC
26 nC
84 nC
29 ns
78 ns
4.95 mJ
192 280 ns
93 ns
2.78 5.00 mJ
29 ns
90 ns
7.45 mJ
200 ns
95 ns
3.70 mJ
0.12 °C/W
0.13 °C/W
IXYB82N120C3H1
PLUS264TM (IXYB) Outline
Pin 1 = Gate
Pin 2,4 = Collector
Pin 3 = Emitter
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF IF = 60A, VGE = 0V, Note 1
IRM
trr
RthJC
IF = 60A, VGE = 0V,
-diF/dt = 700A/μs, VR = 600V
TJ = 125°C
TJ = 125°C
Characteristic Values
Min. Typ. Max.
2.7
1.9
41
V
V
A
420 ns
0.35 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

विन्यास 7 पेज
डाउनलोड[ IXYB82N120C3H1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXYB82N120C3H1High-Speed IGBTIXYS Corporation
IXYS Corporation


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English