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IXTP52P10P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Avalanche Rated - IXYS Corporation

भाग संख्या IXTP52P10P
समारोह P-Channel Enhancement Mode Avalanche Rated
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXTP52P10P?> डेटा पत्रक पीडीएफ

IXTP52P10P pdf
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, V DS = 0.5 • VDSS, ID = 0.5 • I D25
RG = 3.3Ω (External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-3P)(TO-247)
(TO-220)
Characteristic Values
Min. Typ. Max.
12 20
S
2845
1015
275
pF
pF
pF
22 ns
29 ns
38 ns
22 ns
60 nC
17 nC
23 nC
0.21
0.50
0.42 °C/W
°C/W
°C/W
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS VGS = 0V
ISM Repetitive, pulse width limited by TJM
VSD IF = - 26A, VGS = 0V, Note 1
trr
QRM
IRM
IF = - 26A, -di/dt = -100A/ μs
VR = - 50V, VGS = 0V
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
Characteristic Values
Min. Typ. Max.
- 52 A
- 200 A
- 3.5 V
120
0.53
- 8.9
ns
μC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

विन्यास 6 पेज
डाउनलोड[ IXTP52P10P Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXTP52P10PP-Channel Enhancement Mode Avalanche RatedIXYS Corporation
IXYS Corporation


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