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IRLR2908PbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRLR2908PbF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRLR2908PbF?> डेटा पत्रक पीडीएफ

IRLR2908PbF pdf
IRLR/U2908PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
80 ––– –––
––– 0.085 –––
––– 22.5 28
––– 25 30
1.0 ––– 2.5
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
fmVGS = 10V, ID = 23A
fVGS = 4.5V, ID = 20A
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
35 ––– ––– S VDS = 25V, ID = 23A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 80V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Qg Total Gate Charge
––– 22 33 nC ID = 23A
Qgs Gate-to-Source Charge
––– 6.0 9.1
VDS = 64V
Qgd
Gate-to-Drain ("Miller") Charge
––– 11 17
VGS = 4.5V
td(on)
Turn-On Delay Time
––– 12 ––– ns VDD = 40V
tr Rise Time
––– 95 –––
ID = 23A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 36 –––
––– 55 –––
fRG = 8.3
VGS = 4.5V
LD Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
LS Internal Source Inductance
––– 7.5 –––
6mm (0.25in.)
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 1890 –––
––– 260 –––
––– 35 –––
––– 1920 –––
––– 170 –––
––– 310 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 39
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 150
A showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 23A, VGS = 0V
––– 75 110
––– 210 310
fns TJ = 25°C, IF = 23A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes  through ˆ are on page 11
HEXFET® is a registered trademark of International Rectifier.
2
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डाउनलोड[ IRLR2908PbF Datasheet.PDF ]


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International Rectifier


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