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HBNP5213G6 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN AND PNP Dual Epitaxial Planar Transistors - CYStech Electronics

भाग संख्या HBNP5213G6
समारोह NPN AND PNP Dual Epitaxial Planar Transistors
मैन्युफैक्चरर्स CYStech Electronics 
लोगो CYStech Electronics लोगो 
पूर्व दर्शन
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<?=HBNP5213G6?> डेटा पत्रक पीडीएफ

HBNP5213G6 pdf
CYStech Electronics Corp.
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
(Note 1)
Peak Collector Current
(Note 2)
Peak Base Current
(Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
ICP
IBP
Pd
Tj, Tstg
Rth,ja
Limits
NPN
PNP
100 -100
80 -80
7 -7
1 -1
2 -2
200 -200
1.14
0.01
-55~+150
110
Unit
V
V
V
A
A
mA
W
W / °C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t5 sec; 180°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
NPN Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
100
-
- V IC=50μA
BVCEO
80
-
- V IC=1mA
BVEBO
7
-
- V IE=50μA
ICBO - - 100 nA VCB=100V, IE=0
IEBO - - 100 nA VEB=7V, IC=0
*VCE(SAT)
-
0.15 0.3
V IC=500mA, IB=20mA
*VCE(SAT)
-
- 0.5 V IC=1A, IB=50mA
*VBE(SAT)
-
- 1.2 V IC=1A, IB=50mA
*hFE 1
180
-
390
- VCE=10V, IC=150mA
*hFE 2
60
-
-
- VCE=10V, IC=500mA
fT
150 230
- MHz VCE=10V, IC=50mA, f=100MHz
Cob - 6 15 pF VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
HBNP5213G6
CYStek Product Specification

विन्यास 9 पेज
डाउनलोड[ HBNP5213G6 Datasheet.PDF ]


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HBNP5213G6NPN AND PNP Dual Epitaxial Planar TransistorsCYStech Electronics
CYStech Electronics


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