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HBNP1268Q8 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - General Purpose NPN PNP Epitaxial Planar Transistors(quadruple transistors) - CYStech Electronics

भाग संख्या HBNP1268Q8
समारोह General Purpose NPN PNP Epitaxial Planar Transistors(quadruple transistors)
मैन्युफैक्चरर्स CYStech Electronics 
लोगो CYStech Electronics लोगो 
पूर्व दर्शन
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<?=HBNP1268Q8?> डेटा पत्रक पीडीएफ

HBNP1268Q8 pdf
CYStech Electronics Corp.
Spec. No. : C198Q8
Issued Date : 2010.11.29
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Each transistor, Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
(Note 1)
Total Power Dissipation
Linear Derating Factor
(Note 2)
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient (Note 2)
Symbol
VCBO
VCEO
VEBO
IC
ICM
Pd
Tj ; Tstg
Rth,ja
Limits
NPN
PNP
80 -30
50 -30
6 -5
4 -5
7 -7
1.38
0.01
-55~+150
90
Note : 1. Pulse width300μs, duty cycle2%.
2. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum copper pad.
Unit
V
A
A
W
W / °C
°C
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
NPN 1 & NPN 2
Symbol
Min. Typ. Max. Unit Test Conditions
BVCBO
80
-
-
V IC=100μA, IE=0
BVCEO
50
-
-
V IC=1mA, IB=0
BVEBO
6
-
-
V IE=50μA, IC=0
ICBO - - 100 nA VCB=80V, IE=0
ICEO - - 1 μA VCE=50V, IB=0
IEBO - - 100 nA VEB=6V, IC=0
*VCE(SAT)
-
- 100 mV IC=400mA, IB=20mA
*VCE(SAT)
-
- 0.25 V IC=1A, IB=10mA
*VCE(SAT) - 0.25 0.5 V IC=2A, IB=100mA
*RCE(SAT)
-
0.125
0.25
Ω IC=2A, IB=100mA
*VBE(SAT)
-
- 1.5 V IC=2A, IB=200mA
*hFE1 250 - - - VCE=2V, IC=100mA
*hFE2 280 - 600 - VCE=2V, IC=500mA
*hFE3 100 - - - VCE=2V, IC=1A
fT - 90 - MHz VCE=5V, IC=0.1A, f=100MHz
Cob - 13 - pF VCB=10V, f=1MHz
HBNP1268Q8
CYStek Product Specification

विन्यास 8 पेज
डाउनलोड[ HBNP1268Q8 Datasheet.PDF ]


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HBNP1268Q8General Purpose NPN PNP Epitaxial Planar Transistors(quadruple transistors)CYStech Electronics
CYStech Electronics


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