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HBCA124ES6R डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP and NPN Dual Digital Transistors - CYStech Electronics

भाग संख्या HBCA124ES6R
समारोह PNP and NPN Dual Digital Transistors
मैन्युफैक्चरर्स CYStech Electronics 
लोगो CYStech Electronics लोगो 
पूर्व दर्शन
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<?=HBCA124ES6R?> डेटा पत्रक पीडीएफ

HBCA124ES6R pdf
CYStech Electronics Corp.
Spec. No. : C153S6R
Issued Date : 2011.04.01
Revised Date : 2013.09.06
Page No. : 2/8
Absolute Maximum Ratings (Ta=25)
Parameter
Symbol
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
50 -50
-10~+40
-40~+10
30 -30
100 -100
200 (Note)
150
-55~+150
Unit
V
V
mA
mA
mW
°C
°C
Note : 150mW per element must not be exceeded.
Characteristics (Ta=25)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- 0.5 V VCC=5V, IO=100µA
VI(on)
3
-
- V VO=0.2V, IO=5mA
VO(on)
-
0.1 0.3 V IO/II=10mA/0.5mA
II - - 0.36 mA VI=5V
IO(off)
-
- 0.5 uA VCC=50V, VI=0V
GI 56 -
- - VO=5V, IO=5mA
R1 15.4 22 28.6 kΩ -
R2/R1 0.8 1 1.2 - -
fT - 250 - MHz VCE=10V, IC=5mA, f =100MHz *
* Transition frequency of the device
•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- -0.5 V VCC=-5V, IO=-100μA
VI(on)
-3
-
- V VO=-0.2V, IO=-5mA
VO(on) - -0.1 -0.3 V IO/II=-10mA/-0.5mA
II - - -0.36 mA VI=-5V
IO(off)
-
- -0.5 μA VCC=-50V, VI=0V
GI 56 -
- - VO=-5V, IO=-5mA
R1 15.4 22 28.6 kΩ -
R2/R1 0.8 1 1.2 - -
fT - 250 - MHz VCE=-10V, IC=-5mA, f=100MHz*
* Transition frequency of the device
HBCA124ES6R
CYStek Product Specification

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डाउनलोड[ HBCA124ES6R Datasheet.PDF ]


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HBCA124ES6RPNP and NPN Dual Digital TransistorsCYStech Electronics
CYStech Electronics


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